Salary: 25-30KRMB/ month *14 months
Description:
1. Responsible for the in-depth study of GaN device application technology to improve the advancement of application technology;
2. Participate in the review of design schemes and give guidance;
3. Participate in the analysis of technical problems and give guidance;
4. Responsible for the development of key projects and new technology application projects;
5. Carry out internal training regularly;
6. Write process and specification documents and application documents;
7. Guided the completion of device performance testing and evaluation, and developed evaluation strategies;
8. Have a deep understanding of the technology development trend of the power industry, master the domestic and foreign power technology trends;
9. Guide the design work of other engineers;
Requirements:
1. Bachelor degree or above in electrical/power electronics/automation/microelectronics or related major;
2. More than 15 years of switching power development experience;
3. Proficient in using AD, PADS and other design software;
4. Proficient in topologies such as Flyback, Buck, Active Clamp Forward, Boost,PSFB, LLC half bridge and full bridge;
Contact Us
ADDRESS:Ningxia Road#288, Qingdao Software Park building 1 Room 2602, Shinan District, Qingdao, China Postal code 26607
TTEL:+86 18561762383
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