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LOCATION:
GaN Device R&D Expert
2023-03-15

Salary: 20-35KRMB/ month *14 months

 

Responsibilities:

1. Responsible for the core technology research and development of GaN devices according to the company's strategic planning.

2. Responsible for mastering and tracking the technological development trend of similar products at home and abroad, proposing the research and development direction of new technologies and new products, and formulating specific implementation plans and schemes for the combination of basic research and application research, product design and process design.

3. Cooperate with and follow up device design, manufacturing, packaging, testing and verification, and can solve the corresponding technical problems.

 

Requirements:

1.Major in semiconductor physics, microelectronics, physics or related, master degree or above, doctor's degree preferred.

2. At least 5 years working experience in semiconductor industry.

3. Experience in SI - based GaN power devices is preferred.

4. Familiar with domestic and foreign FAB OEM production lines.

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ADDRESS:Ningxia Road#288, Qingdao Software Park building 1 Room 2602, Shinan District, Qingdao, China Postal code 26607

TTEL:+86 18561762383